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Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening

Dagan, Ronen; Vaknin, Yonatan; Weisman, Dror; Amit, Iddo; Rosenwaks, Yossi

Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening Thumbnail


Authors

Ronen Dagan

Yonatan Vaknin

Dror Weisman

Yossi Rosenwaks



Abstract

Van der Waals layered transition metal dichalcogenides, usually exhibit high contact resistance due to the induced Schottky barriers, which occur at non-ideal metal-semiconductor contacts. These barriers usually contribute to an underestimation in the determination of mobility, when extracted by standard, two terminals methods. Furthermore, in devices based on atomically-thin materials, channels with thickness of up to a few layers cannot completely screen the applied gate bias, resulting in an incomplete potential drop over the channel; the resulting decreased field-effect causes further underestimation of the mobility. We demonstrate a method based on Kelvin probe force microscopy, which allows us to extract the accurate semiconductor mobility and eliminates the effects of contact quality and/or screening ability. Our results reveal up to a sevenfold increase in mobility in a monolayer device.

Citation

Dagan, R., Vaknin, Y., Weisman, D., Amit, I., & Rosenwaks, Y. (2019). Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening. ACS Applied Materials and Interfaces, 11(47), 44406-44412. https://doi.org/10.1021/acsami.9b12611

Journal Article Type Article
Acceptance Date Nov 6, 2019
Online Publication Date Nov 14, 2019
Publication Date Nov 27, 2019
Deposit Date Nov 13, 2019
Publicly Available Date Nov 14, 2020
Journal ACS Applied Materials and Interfaces
Print ISSN 1944-8244
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 11
Issue 47
Pages 44406-44412
DOI https://doi.org/10.1021/acsami.9b12611

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Copyright Statement
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.9b12611





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