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Polymer light‐emitting transistors with charge‐carrier mobilities exceeding 1 cm2 V−1 s−1.

Chaudhry, M.U. and Panidi, J. and Nam, S. and Smith, A. and Lim, J. and Tezner, K. and Patsalos, P.A. and Vourlias, G. and Sit, W. and Firdaus, Y. and Heeney, M. and Bradley, D. and Anthopoulos, T.D. (2020) 'Polymer light‐emitting transistors with charge‐carrier mobilities exceeding 1 cm2 V−1 s−1.', Advanced electronic materials., 6 (1). p. 1901132.


The vast majority of conjugated polymer-based light emitting field-effect transistors (LEFETs) are characterized by low charge carrier mobilities typically in the range 10-5 to 10-3 cm2 V-1 s-1 range. Fast carrier transport is a highly desirable characteristic for high frequency LEFET operation and, potentially, for use in electrically-pumped lasers. Unfortunately, high mobility organic semiconductors are often characterised by strong intermolecular π-π interactions that reduce luminescence. Development of new materials and/or device concepts that overcome this hurdle are therefore required. We report single organic semiconductor layer, light-emitting transistors that combine the highest hole mobilities reported to date for any polymer-based LEFET, with encouraging light emission characteristics. We achieve this in a single polymer layer LEFET, which was further enhanced through the use of a small-molecule/conjugated polymer blend system that possesses a film microstructure which supports enhanced charge carrier mobility (3.2 cm2 V-1 s-1) and promising light emission characteristics (1600 cd m-2) as compared to polymer-only based LEFETs. This simple approach represents an attractive strategy to further advance the performance of solution-processed LEFETs.

Item Type:Article
Full text:(AM) Accepted Manuscript
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Publisher statement:This is the accepted version of the following article: Chaudhry, M.U., Panidi, J., Nam, S., Smith, A., Lim, J., Tezner, K., Patsalos, P.A., Vourlias, G., Sit, W., Firdaus, Y., Heeney, M., Bradley, D. & Anthopoulos, T.D. (2020). Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1. Advanced Electronic Materials 6(1): 1901132, which has been published in final form at This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for self-archiving.
Date accepted:29 October 2019
Date deposited:22 November 2019
Date of first online publication:25 November 2019
Date first made open access:25 November 2020

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