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Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors

Arthur, Joshua N.; Chaudhry, Mujeeb Ullah; Woodruff, Maria A.; Pandey, Ajay K.; Yambem, Soniya D.

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Authors

Joshua N. Arthur

Maria A. Woodruff

Ajay K. Pandey

Soniya D. Yambem



Abstract

Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization.

Citation

Arthur, J. N., Chaudhry, M. U., Woodruff, M. A., Pandey, A. K., & Yambem, S. D. (2020). Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors. Advanced Electronic Materials, 6(5), Article 1901079. https://doi.org/10.1002/aelm.201901079

Journal Article Type Article
Acceptance Date Mar 9, 2020
Online Publication Date Mar 26, 2020
Publication Date May 31, 2020
Deposit Date Apr 10, 2020
Publicly Available Date Mar 29, 2024
Journal Advanced Electronic Materials
Electronic ISSN 2199-160X
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 6
Issue 5
Article Number 1901079
DOI https://doi.org/10.1002/aelm.201901079

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Accepted Journal Article (2.4 Mb)
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Copyright Statement
This is the peer reviewed version of the following article: Arthur, Joshua N., Chaudhry, Mujeeb Ullah, Woodruff, Maria A., Pandey, Ajay K. & Yambem, Soniya D. (2020). Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors. Advanced Electronic Materials 6(5): 1901079 which has been published in final form at https://doi.org/10.1002/aelm.201901079. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.





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