We use cookies to ensure that we give you the best experience on our website. By continuing to browse this repository, you give consent for essential cookies to be used. You can read more about our Privacy and Cookie Policy.

Durham Research Online
You are in:

Effect of gate conductance on hygroscopic insulator organic field-effect transistors.

Arthur, Joshua N. and Chaudhry, Mujeeb Ullah and Woodruff, Maria A. and Pandey, Ajay K. and Yambem, Soniya D. (2020) 'Effect of gate conductance on hygroscopic insulator organic field-effect transistors.', Advanced electronic materials., 6 (5). p. 1901079.


Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization.

Item Type:Article
Full text:(AM) Accepted Manuscript
Download PDF
Publisher Web site:
Publisher statement:This is the peer reviewed version of the following article: Arthur, Joshua N., Chaudhry, Mujeeb Ullah, Woodruff, Maria A., Pandey, Ajay K. & Yambem, Soniya D. (2020). Effect of Gate Conductance on Hygroscopic Insulator Organic Field-Effect Transistors. Advanced Electronic Materials 6(5): 1901079 which has been published in final form at This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Date accepted:09 March 2020
Date deposited:11 April 2020
Date of first online publication:26 March 2020
Date first made open access:26 March 2021

Save or Share this output

Look up in GoogleScholar