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Modelling the Key Material Properties of Germanium for Device Simulation in Cryogenic Environments

Bradley, LJ; Horsfall, AB; Dyson, A

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Authors

LJ Bradley

A Dyson



Abstract

Germanium is commonly suggested as an alternative for power electronic devices in emerging liquid hydrogen applications. Despite the clear benefits of a twofold conductivity increase and fabrication familiarity within the community, very few models exist, which describe the temperature-dependent electrical characteristics of the material. Here, models are presented and adapted, which describe the temperature and doping dependence of the carrier concentration, mobility, and velocity from room temperature down to 20 K. For each of these, closed-loop models are adapted, which can be readily used in technology computer-aided design (TCAD) software, and new models are introduced when required. For high-field applications, the carrier velocity has been independently considered for both the ⟨100⟩ and ⟨111⟩ directions with the introduction of a new model for electrons in the ⟨100⟩ direction. With the work conducted here, it is now possible to simulate and predict the performance and suitability of germanium electronics for emerging low- and high-power applications.

Citation

Bradley, L., Horsfall, A., & Dyson, A. (2020). Modelling the Key Material Properties of Germanium for Device Simulation in Cryogenic Environments. IEEE Transactions on Electron Devices, 67(10), 4099-4104. https://doi.org/10.1109/ted.2020.3018097

Journal Article Type Article
Acceptance Date Aug 17, 2020
Online Publication Date Aug 31, 2020
Publication Date 2020-10
Deposit Date Aug 17, 2020
Publicly Available Date Aug 18, 2020
Journal IEEE Transactions on Electron Devices
Print ISSN 0018-9383
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 67
Issue 10
Pages 4099-4104
DOI https://doi.org/10.1109/ted.2020.3018097
Publisher URL https:/doi.org/10.1109/TED.2020.3018097

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Accepted Journal Article (381 Kb)
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