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Inelastic Scattering in Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Mendis, Budhika G.; Barthel, Juri; Findlay, Scott D.; Allen, Leslie J.

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Authors

Juri Barthel

Scott D. Findlay

Leslie J. Allen



Abstract

Electron backscatter diffraction (EBSD) and electron channeling contrast imaging (ECCI) are used to extract crystallographic information from bulk samples, such as their crystal structure and orientation as well as the presence of any dislocation and grain boundary defects. These techniques rely on the backscattered electron signal, which has a large distribution in electron energy. Here, the influence of plasmon excitations on EBSD patterns and ECCI dislocation images is uncovered by multislice simulations including inelastic scattering. It is shown that the Kikuchi band contrast in an EBSD pattern for silicon is maximum at small energy loss (i.e., few plasmon scattering events following backscattering), consistent with previous energy-filtered EBSD measurements. On the other hand, plasmon excitation has very little effect on the ECCI image of a dislocation. These results are explained by examining the role of the characteristic plasmon scattering angle on the intrinsic contrast mechanisms in EBSD and ECCI.

Citation

Mendis, B. G., Barthel, J., Findlay, S. D., & Allen, L. J. (2020). Inelastic Scattering in Electron Backscatter Diffraction and Electron Channeling Contrast Imaging. Microscopy and Microanalysis, 26(6), 1147-1157. https://doi.org/10.1017/s1431927620024605

Journal Article Type Article
Acceptance Date Sep 29, 2020
Online Publication Date Nov 16, 2020
Publication Date 2020-12
Deposit Date Nov 27, 2020
Publicly Available Date May 16, 2021
Journal Microscopy and Microanalysis
Print ISSN 1431-9276
Electronic ISSN 1435-8115
Publisher Cambridge University Press
Peer Reviewed Peer Reviewed
Volume 26
Issue 6
Pages 1147-1157
DOI https://doi.org/10.1017/s1431927620024605

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