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Monte Carlo simulations of high-speed InSb-InAlSb FETs

Herbert, DC; Childs, PA; Abram, RA; Crow, GC; Walmsley, M

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Authors

DC Herbert

PA Childs

RA Abram

GC Crow

M Walmsley



Abstract

Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-μm gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7×1012 cm-2.

Citation

Herbert, D., Childs, P., Abram, R., Crow, G., & Walmsley, M. (2005). Monte Carlo simulations of high-speed InSb-InAlSb FETs. IEEE Transactions on Electron Devices, 52(6), 1072-1078. https://doi.org/10.1109/ted.2005.848115

Journal Article Type Article
Publication Date Jun 1, 2005
Deposit Date Dec 16, 2010
Publicly Available Date Mar 28, 2024
Journal IEEE Transactions on Electron Devices
Print ISSN 0018-9383
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 52
Issue 6
Pages 1072-1078
DOI https://doi.org/10.1109/ted.2005.848115
Keywords High-speed response, InSb, MODFET, Monte Carlo simulation, Impact ionization, Low power.

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