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Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers

Walmsley, M; Abram, RA

Authors

M Walmsley

RA Abram



Abstract

Recent pump probe measurements of the fast optical response of semiconductor laser amplifiers are modelled using a density matrix approach in the relaxation approximation. The results obtained with the model in a variety of situations covering the three regimes below, at and above transparency are examined in terms of the optical response and the underlying carrier dynamics. The essential features of the optical response are explained using a simple physical picture and good qualitative agreement with experiment is demonstrated.

Citation

Walmsley, M., & Abram, R. (1997). Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers. IEE proceedings. Optoelectronics, 144(4), 189-196. https://doi.org/10.1049/ip-opt%3A19970510

Journal Article Type Article
Publication Date Aug 1, 1997
Deposit Date Dec 16, 2010
Journal IEE proceedings. Optoelectronics.
Print ISSN 1350-2433
Publisher Institution of Engineering and Technology (IET)
Peer Reviewed Peer Reviewed
Volume 144
Issue 4
Pages 189-196
DOI https://doi.org/10.1049/ip-opt%3A19970510
Keywords Laser theory, Matrix algebra, Refractive index, Semiconductor device models, Semiconductor lasers.


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