Dr Aidan Hindmarch a.t.hindmarch@durham.ac.uk
Associate Professor
Interface magnetism in ferromagnetic metal-compound semiconductor hybrid structures
Hindmarch, AT
Authors
Abstract
Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe/GaAs(001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.
Citation
Hindmarch, A. (2011). Interface magnetism in ferromagnetic metal-compound semiconductor hybrid structures. SPIN, 1(1), 45-69. https://doi.org/10.1142/s2010324711000069
Journal Article Type | Article |
---|---|
Publication Date | Jan 1, 2011 |
Deposit Date | Aug 24, 2011 |
Publicly Available Date | May 22, 2012 |
Journal | SPIN |
Print ISSN | 2010-3247 |
Electronic ISSN | 2010-3255 |
Publisher | World Scientific Publishing |
Peer Reviewed | Peer Reviewed |
Volume | 1 |
Issue | 1 |
Pages | 45-69 |
DOI | https://doi.org/10.1142/s2010324711000069 |
Keywords | Magnetic anisotropy, Thin-films and interfaces, III–V semiconductors. |
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Copyright Statement
Electronic version of an article published as Spin, 1,1, 2011, 45-69, 10.1142/S2010324711000069 © Copyright World Scientific Publishing Company.
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