Oxygen vacancy levels and electron transport in Al(2)O(3)

Liu, D.; Clark, S.J.; Robertson, J.

doi:10.1063/1.3293440

Oxygen vacancy levels and electron transport in Al(2)O(3)

Liu, D.; Clark, S.J.; Robertson, J.

Authors

D. Liu

Professor Stewart Clark s.j.clark@durham.ac.uk
Professor

J. Robertson

Abstract

The energy levels of the oxygen vacancy in α- and θ-Al2O3 were calculated using the screened exchange hybrid functional, and explain the electron hopping and trapping levels seen in deposited Al2O3 at ∼ 1.8 eV below its conduction band edge. The vacancy supports five accessible charge states, from 2+ to 2−. Electron hopping corresponds to the 0/− level, which lies 1.8 eV below the conduction band edge in θ-Al2O3. This level lies much deeper than it does HfO2. The +/0 level lies at 2.8 eV above oxide valence band in θ-Al2O3 and thus below the Si valence band top.

Citation

Liu, D., Clark, S., & Robertson, J. (2010). Oxygen vacancy levels and electron transport in Al(2)O(3). Applied Physics Letters, 96(3), Article 032905. https://doi.org/10.1063/1.3293440

Journal Article Type	Article
Publication Date	Jan 18, 2010
Deposit Date	Jan 31, 2012
Publicly Available Date	Oct 9, 2012
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	96
Issue	3
Article Number	032905
DOI	https://doi.org/10.1063/1.3293440
Keywords	Aluminium compounds, Conduction bands, Hopping conduction, Vacancies (crystal), Valence bands.

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Copyright Statement
© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Liu, D. and Clark, S.J. and Robertson, J. (2010) 'Oxygen vacancy levels and electron transport in Al(2)O(3).', Applied physics letters., 96 (3), 032905 and may be found at http://dx.doi.org/10.1063/1.3293440